parameter conditions forward rectified current forward surge current reverse current thermal resistance diode junction capacitance storage temperature ambient temperature = 55 c o 8.3ms single half sine-wave superimposed on rate load (jedec methode) f=1mhz and applied 4v dc reverse voltage symbol min. typ. max. unit i o i fsm i r r ja c j t stg a a a o c/w o c pf 3.0 100 5.0 +175 -65 15 v = v t = 25 c r rrm j o v = v t = 100 c r rrm j o junction to ambient 70 300 mura305g mura310g MURA320G 50 100 200 35 70 140 symbols v rrm (v) v rms v r (v) (v) *1 *2 *3 *1 repetitive peak reverse voltage *2 rms voltage *3 continuous reverse voltage *4 maximum forward voltage@i =3.0a f *5 maximum reverse recovery time, note 1 v f (v) *4 mura330g mura360g 400 600 280 420 1.30 -55 to +150 mura380g mura3100g 800 1000 560 700 t rr (ns) *5 50 75 50 100 200 400 600 800 1000 1.00 1.70 (c) o operating temperature t, j 0.272(6.9) 0.248(6.3) 0.012(0.3) typ. 0.189(4.8) 0.165(4.2) 0.098(2.5) 0.075(1.9) 0.048 (1.2) typ. 0.048(1.2) typ. note 1. reverse recovery time test condition, i =0.5a, i =1.0a, i =0.25a frrr mura305g thru mura3100g chip silicon rectifier 3.0a surface mount high effciency rectifiers - 50v-1000v features batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. low profile surface mounted application in order to optimize board space. high current capability. high surge current capability. glass passivated chip junction. ? ultrafast recovery time for high efficiency. lead-free parts meet rohs requirments. ? ? ? ? ? ? ? suffix "-h" indicates halogen free parts, ex. mura305g-h. mechanical data ? ? ? ? ? ? epoxy:ul94-v0 rated flame retardant case : molded plastic, jedec do-214ab / smc terminals : solder plated, solderable per mil-std-750, method 2026 polarity : indicated by cathode band mounting position : any weight : 0.19 gram approximated smc package outline dimensions in inches and (millimeters) page 1/2 @ 2010 copyright by american first semiconductor maximum ratings (at t =25 o c unless otherwise noted) a
rating and characteristic curves fig.2-typical forward current derating curve average for ward current ,(a) 0.6 1.2 1.8 2.4 3.0 3.6 (+) (+) 25vdc (approx.) ( ) ( ) pulse generator (note 2) oscilliscope (note 1) 1 non- inductive notes: 1. rise time= 7ns max., input impedance= 1 megohm.22pf. 2. rise time= 10ns max., source impedance= 50 ohms. +0.5a 0 -0.25a -1.0a | | | | | | | | 1cm set time base for 50 / 10ns / cm trr d.u.t. ambient temperature ( c) fig.3- test circuit diagram and reverse recovery time characteristics 10 noninductive 50 noninductive fig.4-maximum non-repetitive forward surge current peak for waard surge current ,(a) 20 0 40 60 80 100 number of cycles at 60hz 110 5 50 100 t =25 c j 8.3ms single half sine wave jedec method single phase half wave 60hz resistive or inductive load 0 20 40 60 80 100 120 140 160 180 200 0 fig.5-typical junction capacitance reverse voltage,(v) junction cap acitance,(pf) 175 150 125 100 75 50 25 0 .01 .05 .1 .5 1 5 10 50 100 .4 .6 .8 1.0 1.2 1.4 .001 .01 .1 1.0 10 fig.1-typical forward characteristics instantaneous for ward current ,(a) forward voltage,(v) pulse width 300us 1% duty cycle t =25 c j 1.6 1.8 mura360g~mura3100g mura330g mura305g~MURA320G mura305g thru mura3100g page 2/2 www.first-semi.com
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